THEORETICAL COMPARATIVE STUDY OF SOME SELECTED SEMICONDUCTOR CRYSTAL QUANTITIES: SILICON AND GERMANIUM AT GROUND STATE LEVEL.

THEORETICAL COMPARATIVE STUDY OF   SOME SELECTED SEMICONDUCTOR CRYSTAL QUANTITIES: SILICON AND GERMANIUM AT GROUND STATE LEVEL.

Michael Obende1 and Emmanuel Olagunju2

                          1,2Department of Physics, Afe Babalola University, Ado Ekiti, Nigeria

 

Abstract

Semiconductors are materials whose electronic properties are intermediate between those of metals and insulators. These intermediate properties are determined by the crystal structure, bonding characteristics and electronic energy band. This work compares some properties of semiconductors such as energy gaps, effective mass, radius of ground state orbit, donor ionization energy, and carrier concentration of Silicon and Germanium were computed from calculations of relevant band structures using density functional theory. The results showed that the energy of silicon and germanium has greater values compared to Indium Antimony and (InSb) Gallium Arsenide ( GaAs). Indium Antimony were in good agreement with experimental values. This work also revealed that germanium possessed considerable carrier concentration, radius of orbit and ionization energy over other selected semiconductor materials.

Keywords: Density Functional Theory, Semiconductor, Crystal , Quantities.

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